0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 bar14;BAR15;bar16 features rf switch rf attenuator for frequencies above 10 mhz low distortion factor long-term stability of electrical characteristics absolute maximum ratings ta = 25 parameter symbol value unit reverse voltage v r 100 v forward current i f 140 ma total power dissipation, t s 65 1) p tot 250 mw junction temperature t j 150 storage temperature t stg -55to+150 operating temperature range t op -55to+150 junction - ambient 1) r thja 500 junction - soldering point r thjs 340 note 1. package mounted on alumina 15 mm 16.7 mm 0.7 mm. k/w marking type bar14 BAR15 bar16 markingl7l8l9 electrical characteristics ta = 25 parameter symbol test condition min typ max unit v r =50v 100 na v r =100v 1 a forward voltage v f i f = 100 ma 1.05 v v r = 50 v, f = 1 mhz 0.25 0.5 v r =0,f=100mhz 0.2 i f = 0.01 ma, f = 100 mhz 2800 i f = 0.1 ma, f = 100 mhz 380 i f =1ma,f=100mhz 45 i f =10ma,f=100mhz 7 zero bias conductance g p v r =0,f=100mhz 50 s charge carrier life time t rr i f =10ma,i r =6ma 0.7 1 s reverse current v r diode capacitance c t forward resistance r f pf sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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